哪位高手帮我翻译一下啊。 专业英语要翻译出 语句要通顺， 我急需，在此谢谢了！

Question

Such being the case, the bare silicon wafer CMP has progressed toward planarization polishing or CMP for LSI devices. However, the process applicable is supposed to vary depending on the LSI types. As is the case with the planarization by etch-back method, CMP is basically applied to the device, isolation, and interconnection processes on SiO2 film (oxide film) as interlevel dielectric layers, metal film (W, Al, Cu, etc.) as interconnection materials, and polycrystalline silicon (poly-Si) and single crystal silicon as capacitor materials.
Figure 7.9 shows a sectional diagram of a device and the processes to which planarization CMP is applied. From the bottom, they are STI CMP, interlevel dielectric (ILD) layer CMP, W-plug damascene CMP, and wiring metals (Al, Cu) damascene CMP. When the plug and ILD are formed simultaneously, it is termed a dual damascene CMP.
Figure 7.10 indicates Cu wiring process by the dual damascene method. Basic requirements for the wafer planarization in the device fabrication process and its related processing factors and conditions are shown in Table 7.5.

Answer 1

既然如此，裸硅晶片的CMP平坦化抛光对已取得进展或LSI器件中医。然而，这个过程应该适用取决于LSI的类型。由于是通过蚀刻与回法平坦化的情况下，CMP是基本适用的设备，隔离，并在SiO2薄膜作为层间绝缘层，金属膜（宽，铝，铜等）（氧化膜）互连工艺作为互连材料，多晶硅（多晶硅）和电容材料单晶硅。
图7.9显示了一个设备截面图和对中医的平坦化应用进程。从底部，他们是性病中医，层间介电层（ILD的）层中医，W型插入镶嵌中医，和接线金属（铝，铜）镶嵌中医。当插件和ILD形成同时，它被称为双重镶嵌中医。
图7.10显示了双镶嵌铜布线工艺方法。为在晶圆平坦化制程设备及其相关加工因素和条件的基本要求见表7.5。

Answer 2

既然如此，裸硅片CMP向LSI器件的平坦化抛光CMP进展。但是，适用的过程应该根据LSI的类型而有所不同。由于是回蚀法的平坦化的情况下，CMP基本上是应用到的装置中，隔离，和互连过程上的SiO 2膜（氧化膜）作为层间介电层，金属膜（W，铝，铜等）作为互连材料，和多晶硅（多晶Si），作为电容器材料的单晶硅。
图7.9示出的装置的截面图和的处理，平坦化CMP施加。从底部，它们是STI CMP，层间电介质（ILD）层的CMP，W-插头镶嵌CMP，和布线金属（铝，铜）镶嵌CMP。当插头和ILD是同时形成的，它被称为双镶嵌的CMP。
图7.10表示铜布线过程中的双镶嵌法。的基本要求的晶片的平坦化设备中的制造工艺和其相关的处理的因素和条件示于表7.5中。

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